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?2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
December 2004
1N456A Rev. A
1N456A Small Signal Diode
1N456A
Small Signal Diode
Absolute Maximum Ratings *
Ta
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
TC
= 25°C unless otherwise noted
Symbol Parameter Value Unit
VRRM
Maximum Repetitive Reverse Voltage 30 V
IF(AV)
Average Rectified Forward Current 500 mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
TSTG
Storage Temperature Range -65 to +200
°C
TJ
Operating Junction Temperature 175
°C
Symbol Parameter Value Unit
PD
Power Dissipation 500 mW
RθJA
Thermal Resistance, Junction to Ambient 300
°C/W
Symbol Parameter Conditions Min. Max Units
VR
Breakdown Voltage IR
= 5
μA30V
VF
Forward Voltage IF
= 100mA 1.0 V
IR
Reverse Leakage VR
= 25V
25
nA
VR
= 25V, T
A
= 150
°C
50
μA
DO-35
Color Band Denotes Cathode
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